Thermal Component Network Model for High Power IGBT Developed in Joint Collaboration Between NIST and UPRM-CPES.

A collaborative effort between Dr. Allen Hefner and Dr. Miguel Vélez-Reyes from CPES-UPRM has resulted in the development of a thermal component network models in the Saber software for a high power IGBT. This work was an extension of Dr. Hefner’s approach for a single chip IGBT module. The previously developed thermal network component models for single chip IGBT are not applicable to high power modules because the high power devices contain multiple chips within the same package, require heat conduction through the electrical isolation layers, and are typically used with large multi-module heat sinks that have a highly non-uniform surface temperature. The developed model was integrated with temperature-dependent IGBT models in Saber to simulate the electro-thermal behavior of power electronic systems using these modules. The developed thermal models were tested and validated in experimental facilities at NIST and UPRM. Furthermore, the developed methodology was also applied to the development of thermal component network models of the IPEM Generation II. Four students from UPRM and one from VT were involved in this project. Two of the UPRM students are currently employed by NIST. The developed model continues to be used and improved at NIST.