Fundamental Knowledge Thrust: Advanced Power Semiconductors (APS)
Leader: T. Paul Chow, Rensselaer Polytechnic Institute
The goal of the APS thrust is exploration and demonstration of
selected novel silicon and wide bandgap semiconductor (SiC and
GaN) devices and ICs that will enable significant performance,
reliability as well as cost improvements in power electronics systems.
We have demonstrated enhancement mode GaN MOSFETs with blocking
voltage up to 1kV, by first obtaining much improved MOS properties
on GaN capacitors with optimized oxide deposition and annealing
conditions. The figure below shows a proposed a GaN MOS-gated bi-directional
switch, which consists of a pair of anti-parallel connected complementary
MOSFET/Schottky rectifiers. Other significant accomplishments include:
1) proposed and demonstrated a novel SiC lateral channel JBS rectifier
structure which has low leakage current and capacitance; 2) demonstrated
4kV epi-emitter BJTs in 4H-SiC and performance superior to those
of previously reported 3.2kV devices; 3) invented several new Si
lateral trench RESURF-type MOSFET structures with overall superior
loss characteristics.
 |
 |
 |
|
GaN MOS-gated bidirectional switch: structure, circuit
schematic, and characteristics |
|