Rensselaer Polytechnic Institute Facilities
The power semiconductor device research is conducted at RPI within the Center for Integrated Electronics and Electronics Manufacturing (CIEEM). The CIEEM is equipped with a 9,500 sq.ft. micro-fabrication clean room. In addition, an electronic material research lab is well equipped with high-band gap semiconductor research. CPES has made a substantial capital equipment investment in its purchase of a custom-designed SiC CVD reactor with an RF power supply and a reactor chamber scale-up. Since its purchase, this reactor has been involved with pioneering SiC epi growth (such as in situ phosphorous doping in 4H-SiC) and identification of defect formation during epi growth, and has acted as an in-house source of epi layers for prototype power device fabrication, thus, allowing CPES to realize novel SiC devices.
The vertical SiC epitaxial reactor
The horizontal SiC epitaxial reactor